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內容簡介

　　Multilayer Integrated Film Bulk Acoustic Resonators mainly introduces the theory， design， fabrication technology and application of a recently devel-oped new type of device， multilayer integrated film bulk acoustic resona-tors， at the micro and nano scale involving microelectronic devices， integrated arcuits， optical devices， sensors and actuators， acoustic resona-tors， micro-nano manufacturing， multilayer integration， device theory and design prinaples， etc. These devices can work at very high frequencies by using the newly developed theory， design， and fabrication technology ofnano and micro devices.
　　Readers in fields ofIC， electronic devices， sensors， materials， and films etc. will benefit from this book by learning the detailed fundamentals and potential applications of these advanced devices.
　　Prof. Yafei Zhang is the director of the Ministry of Education's Key Labora-tory for Tlhin Films and Microfabrication Technology， PRC; Dr. Da Chenwas a PhD student in Prof. Yafei Zhang's research group.

內頁插圖

目錄

Chapter1 Introduction
1.1 RF Filters in GHz Wireless Applications
1.1.1 The Requirement of RF Filters
1.1.2 Types ofRF Filters .
1.2 Bulk Acoustic Wave （BAW） Resonator and Its Development
1.2. BAW Resonator
1.2.2 Micro Electromechanical Systems （MEMS） Applied in BAW
1.3 The Principle and Configurations ofFBAR
1.3.1 The Principle of FBAR
1.3.2 Typical FBAR Configurations
1.3.3 Current Status of FBAR Filters
1.4 The Application of FBAR in Mass Loading Sensors
1.4.1 Acoustic Resonant Mass Sensors
1.4.2 FBAR Mass Loading Sensors
1.5 Overview of the Chapters
References

Chapter2 Propagation of Acoustic Wave in Crystals
2.1 The Equation ofAcoustic Plane Wave
2.1.1 The Equation of Elastic Deformation
2.1.2 Christoffel Equation
2.2 Propagation of Plane Wave in Isotropic Medium
2.3 Propagation of Plane Wave in Anisotropic Medium
2.3.1 Dispersion Relation and Inverse Velocity Face
2.3.2 The Solution of Wave Equation in Cubic Crystal
2.4 Piezoelectrically Active Wave Propagation
2.5 The Plane Wave Propagating in Piezoelectric Hexagonal Crystal
References

Chapter 3 The Theory of FBAR
3.1 The Electric Impedance of the Ideal FBAR
3.1.1 The Analytic Expression of the Electric Impedance
3.1.2 The Resonance of FBAR
3.2 The Electric Impedance of the Compound FBAR
3.2.1 The Definition of the Acoustic Impedance
3.2.2 The Boundary Condition of Compound FBAR
3.3 The Loss and Performances of FBAR
3.4 The Equivalent Electromechanical Mode of FBAR
3.4.1 The Equivalent Mode of the Layers
3.4.2 The Universal Equivalent Mode of FBAR
3.4.3 The Equivalent Circuit Nears the Resonance of FBAR
3.5 The Calculated Influence of the Materials and Structure on the Device Performance
3.5.1 The Effects of the Electrode......
3.5.2 The Influences of' Supporting Layer and the Residue Silicon Layer
References

Chapter 4 The Deposition and Etching of AIN Film
4.1 Deposition of AIN Film by RF Magnetron Sputtering
4.1.1 Introduction
4.1.2 Experimental
4.1.3 The Effect of RF Power on the Film Texture
4.1.4 The Influence of Ambit Pressure and the Ratio of N2/Ar on the Film Structure
4.1.5 The Influence of the Substrate Temperature on the Film Texture
4.1.6 The Microstructure and Chemical Component
4.2 The Scructural Characreristics of AIN Films Deposited on Diff'erent Eleccrodes
4.3 Dry Etching of AIN Films Using Fluoride Plasma
4.3.1 The Dry Etching of AIN Films..
4.3.2 Experimental
4.3.3 The Etching Rate
4.3.4 The Morphologies
4.3.5 The Etching Mechanism.
4.4 The Wet Etching of AIN
4.4.1 The Wet Etching Process
4.4.2 Experimental
4.4.3 The Influence of the Film Texture
4.4.4 The Effects of Crystal Quality
References

Chapter 5 The FBAR with Membrane Structure
Chapter 6 Solidly Mounted Acoustic Resonator
Chapter 7 The Applications of FBAR in RF Filters
Chapter 8 The FBAR Excited by Lateral Filed
Chapter 9 High Sensitive Sensors Based on FBAR
Index

精彩書摘

　　The reasons above can lead to the nonlinearity of response when the HC-polymer is too thick. At the same time， the group applied the sensor in testing for DNA and protein molecules， whose sensitivity is about 2，500 times [23] higher than that of 20 MHz QCM.
　　 In Italy， Brederlow et al. [25] in the University of Roma made a similar experiment. They adopt AIN material to constitute the Bragg reflector of resonator whose Q value is as high as 500 in air. Through matching DNA， AIN material can adsorb certain substance with a preferential adsorption， and the response frequency drifts 10 kHz to mass adsorption of 1 ng/Um2.
　　 In the UAS， Zhang's group [14， 15， 21， 26， 27] in University of Southern California reported a FBAR sensor which can work in a lot ofliquid. The resonator structure they adopted is A1（0.2 Um） /2n0（1.8 Um）/AI（0.2 UM）/S13N4（0.6 UM，ffl）. Figure 9.5 shows the structure diagram and photos of testing and real object. The Q value of device is 250 in the air， but 15 in the water. After testing many kinds of
　　substances， the adsorption experiments show that the sensor can detect mass change of 10-8 g/cm2 when the FBAR resonance frequency is near 2 GHz. On the FBAR electrode they deposited a layer of Ti02 as adsorption function layer. When the device was put in K2C03 solution， OH- on function layer surface is instead by OK-， so the device can test the concentration of solution. The resonance frequency can drift 100 kHz [27] to the concentration of 10 mM. Using Au as adsorption layer of the FBAR sensor， it can also detect metal ions in solution. Demonstrated by experiments， the device can effectively detect Hg2+ ions with the solution concentration of 0.2 ppb-2 ppm [14]. Recently， the group also reported that the sensor can detect matching DNA sequences used by coating specific base-pairs [15] in FBAR.
　　 In addition， the FBAR working in shear wave mode is also applied in biochemical sensor. Because particle vibration direction of shear wave is perpendicular to the direction of propagation that is to the thickness direction of'the piezoelectric crystal， the direction of particle vibration is along the surface of crystal. So， in theory in liquid phase environment， loss of shear wave is zero. The traditional QCM is the quartz crystal cut by AT working in shear wave mode. In order to produce shear wave in the FBAR， generally there should be an angle between c axis of six-party crystal and the direction of driving electric field， to generate horizontal electric field component and stimulate the shear wave. At present， AIN and Zn0 FBAR sensors working in shear mode have been reported. Sweden's Wingqvist research group [16-18， 28， 29]developed the shear wave FBAR sensor of AIN material， and measured the changed relation between mass and resonant frequency in the liquids of different viscous coefficients. The c axis of AIN film tilts 30o， and the pictures of device structure and testing process is shown in Fig. 9.6. In University of Zurich in Switzerland， Weber et al. [30， 31] developed FBAR sensors in shear mode for testing antigen and antibody， using the Zn0 film whose c axis tilt 16o and ZnO/Pt as Bragg reflector.
　　……

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多層膜集成結構體聲波諧振器（英文版） [Multilayer Integrated Film Bulk Acoustic Resonators] 下載 mobi epub pdf txt 電子書

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